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US 5,349,232 AGranted
Protection diode for a vertical semiconductor component
AssigneeSGS-Thomson Microelectronics S.A.
InventorsJacques Mille, Philippe Meunier
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AssigneeSGS-Thomson Microelectronics S.A.
InventorsJacques Mille, Philippe Meunier
Estimating the term…
A high voltage avalanche diode formed in an integrated circuit includes vertical power components. The integrated circuit is formed in an N-type semiconductor substrate. The rear surface of the substrate corresponds to a first main electrode of the power components, whose second main electrodes correspond to regions formed in P-type wells which are formed in the front surface of the substrate. The diode includes a P-type region wound substantially as a spiral that is formed in the front surface of the substrate; non-overlapping N-type regions formed in equal number in each turn of the spiral and forming with the spiral elemental avalanche diodes; metallizations connecting in series the elemental diodes; and a connection between an end of the spiral and the first electrode.
A high voltage avalanche diode formed in an integrated circuit including at least one vertical power component, the integrated circuit being made in a semiconductor substrate of a first conductivity type having a rear surface contact that corresponds to a first main electrode of the power component, at least one contact region formed in at least one region of a second conductivity type formed in a front surface of the substrate that corresponds to a second main electrode, said diode including:
An avalanche diode formed in a semiconductor structure combining at least one power transistor and one logic or analog portion on a same semiconductor substrate, the power transistor being of the vertical type and including a main electrode on a rear surface of the substrate, wherein the diode includes:
Dependencies are inferred from the claim text.