US 5,349,211 AGranted

Semiconductor infrared emitting device with oblique side surface with respect to the cleavage

AssigneeNEC Corporation

InventorTetsuro Kato

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Abstract

A semiconductor infrared emitting device is fabricated from an n-type gallium arsenide substrate, an n-type gallium arsenide layer on the top surface of the substrate, a p-type gallium arsenide layer formed on the n-type gallium arsenide layer for forming a p-n junction therebetween, and electrodes provided on the p-type gallium arsenide layer and the reverse surface of the substrate for applying a bias voltage to the p-n junction, and the side surface of the substrate declines from the cleavage surface of the gallium arsenide substrate so that the incident angle of infrared varies at the crystal surfaces, thereby allowing the infrared to be radiated from the semiconductor infrared emitting device.

Claims9

Dependent claims

A semiconductor infrared emitting device comprises:

a) a substrate of one conductivity type formed of a first compound semiconductor, and having a reverse surface, a top surface substantially parallel to said reverse surface and side surfaces obliquely extending from said top surface at a predetermined angle;
b) a first film of said one conductivity type formed of a second compound semiconductor, and provided on said top surface of said substrate;
c) a second film of the opposite conductivity type formed of a third compound semiconductor, and provided on said first film for forming a p-n junction therebetween;
d) a first electrode formed on said second film, biased for producing said infrared light around said p-n junction;
and
e) a second electrode formed on said reverse surface of said substrate.

3 more elements

Dependencies are inferred from the claim text.

Facts

Application: 08/036,232Filed 24 Mar 1993
Priority: JP 4-06785526 Mar 1992
Granted: 20 Sep 1994
Term ends: Not estimatedThe source records don’t support an estimate.

Classification3 codes

H10H 20/819
Bodies: characterised by their shape, e.g. curved or truncated substrates
H10H 20/01
Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]: manufacture or treatment
H10H
Inorganic light-emitting semiconductor devices having potential barriers

Family

No related US applications are recorded in the indexed filing history.

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