Silicon carbide wafer bonded to a silicon wafer
AssigneeTexas Instruments Incorporated
InventorSatwinder Malhi
Life of this patent
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Abstract
A silicon carbide structure (10) and method capable of using existing silicon wafer fabrication facilities. A silicon wafer (20) is provided which has a first diameter. At least one silicon carbide wafer (30) is provided which has a given width and length (or diameter). The width and length (or diameter) of the silicon carbide wafer (30) are smaller than the diameter of the silicon wafer (20). The silicon wafer (20) and the silicon carbide wafer (30) are then bonded together. The bonding layer (58) may comprise silicon germanium, silicon dioxide, silicate glass or other materials. Structures such as MOSFET (62) may be then formed in silicon carbide wafer (30).
Claims20
A silicon carbide structure capable of using existing silicon wafer fabrication facilities comprising:
- a. a silicon wafer having a first diameter;
- b. at least one silicon carbide wafer having a predetermined maximum width and a predetermined maximum length, wherein said predetermined maximum width and predetermined maximum length are smaller than said first diameter;
- and
- c. a bonding layer located between said silicon wafer and said at least one silicon carbide wafer.
A silicon carbide structure capable of using existing silicon wafer fabrication facilities comprising:
- a silicon wafer having a first diameter;
- at least one silicon carbide wafer having a predetermined maximum width and a predetermined maximum length, wherein said predetermined maximum width and predetermined maximum length are smaller than said first diameter;
- and
- a silicon germanium bonding layer located between said silicon wafer and said at least one silicon carbide wafer.
A silicon carbide structure capable of using existing silicon wafer fabrication facilities comprising:
- a silicon wafer having a first diameter;
- at least one silicon carbide wafer having a predetermined maximum width and a predetermined maximum length, wherein said predetermined maximum width and predetermined maximum length are smaller than said first diameter;
- and
- a silicate glass bonding layer located between said silicon wafer and said at least one silicon carbide wafer.
Dependencies are inferred from the claim text.