Photoelectric conversion device

A semiconductor device comprising:

• a substrate having a conductive surface;;
• a non-single-crystal semiconductor laminate member formed on said conductive surface of said substrate, including at least one I-type non-single-crystal semiconductor layer and having formed therein at least one junction selected from the group consisting of PI, NI, PIN and NIP junctions;
• and
• a second conductive layer formed on the said non-single-crystal semiconductor laminate member;
• wherein said I-type non-single-crystal semiconductor layer of the non-single-crystal semiconductor laminate member contains carbon in a low concentration of only 4.times.10.sup.18 atoms/cm.sup.3 or less.

A semiconductor device comprising:

• a substrate having a conductive surface;
• a non-single-crystal semiconductor laminate member formed on said conductive surface of said substrate, including at least one I-type non-single-crystal semiconductor layer and having formed therein at least one junction selected from the group consisting of PI, NI, PIN and NIP junctions;
• and
• a second conductive layer formed on said non-singe-crystal semiconductor laminate member;
• wherein said I-type non-single-crystal semiconductor layer of the non-single-crystal semiconductor laminate member contains phosphorus in a low concentration of only 5.times.10.sup.15 atoms/cm.sup.3 or less.

A semiconductor device comprising:

• a first electrode;
• a photovoltaic conversion layer formed on said first electrode and comprising at least a non-single crystalline semiconductor layer having a substantially intrinsic conductivity type;
• and
• a second electrode formed on said photovoltaic semiconductor layer,
• wherein said non-single crystalline semiconductor layer contains oxygen in the low concentration of only 5.times.10.sup.19 atoms/cm.sup.3 or less.

A semiconductor device comprising:

• a first electrode;
• a photovoltaic conversion layer formed on said first electrode and comprising at least a non-single crystalline semiconductor layer having a substantially intrinsic conductivity type;
• and
• a second electrode formed on said photovoltaic semiconductor layer,
• wherein said non-single crystalline semiconductor layer contains carbon in the low concentration of only 4.times.10.sup.18 atoms/cm.sup.3 or less.

A semiconductor device comprising:

• a first electrode;
• a photovoltaic conversion layer formed on said first electrode and comprising at least a non-single crystalline semiconductor layer having a substantially intrinsic conductivity type;
• and
• a second electrode formed on said photovoltaic semiconductor layer,
• wherein said non-single crystalline semiconductor layer contains phosphorous in the low concentration of only 5.times.10.sup.15 atoms/cm.sup.3 or less.

A semiconductor device comprising:

• a photovoltaic conversion layer comprising a non-single crystalline semiconductor layer;
• and
• a pair of electrodes contacting said photovoltaic conversion semiconductor layer,
• wherein said non-single crystalline semiconductor layer contains oxygen in the low concentration of only 5.times.10.sup.19 atoms/cm.sup.3 or less.

A semiconductor device comprising:

• a photovoltaic conversion layer comprising a non-single crystalline semiconductor layer;
• and
• a pair of electrodes contacting said photovoltaic conversion semiconductor layer,
• wherein said non-single crystalline semiconductor layer contains carbon in the low concentration of only 4.times.10.sup.18 atoms/cm.sup.3 or less.

A semiconductor device comprising:

• a photovoltaic conversion layer comprising a non-single crystalline semiconductor layer;
• and
• a pair of electrodes contacting said photovoltaic conversion semiconductor layer,
• wherein said non-single crystalline semiconductor layer contains phosophorous in the low concentration of only 5.times.10.sup.15 atoms/cm.sup.3 or less.

A semiconductor device comprising:

• a non-single crystalline semiconductor layer having substantially an intrinsic conductivity type;
• and
• a pair of electrodes contacting said non-single crystalline semiconductor layer,
• wherein said non-single crystalline semiconductor layer contains oxygen in the low concentration of only 5.times.10.sup.19 atoms/cm.sup.3 or less.

A semiconductor device comprising:

• a non-single crystalline semiconductor layer having substantially an intrinsic conductivity type;
• and
• a pair of electrodes contacting said non-single crystalline semiconductor layer,
• wherein said non-single crystalline semiconductor layer contains carbon in the low concentration of only 4.times.10.sup.18 atoms/cm.sup.3 or less.

A semiconductor device comprising::

• a non-single crystalline semiconductor layer having substantially an intrinsic conductivity type;
• and
• a pair of electrode contacting said non-single crystalline semiconductor layer,
• wherein said non-single crystalline semiconductor layer contains phosphorous in the low concentration of only 5.times.10.sup.15 atoms/cm.sup.3 or less.