Ion implanting apparatus
AssigneeHitachi, Ltd.
InventorsKensuke Amemiya, Yoshimi Hakamata, Katsumi Tokiguchi, Noriyuki Sakudo
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AssigneeHitachi, Ltd.
InventorsKensuke Amemiya, Yoshimi Hakamata, Katsumi Tokiguchi, Noriyuki Sakudo
Estimating the term…
An ion implanting apparatus includes a magnetic quadrupole lens disposed between an ion source and an RFQ accelerator. The magnetic quadrupole lens carries out mass spectrometry of an ion beam extracted from the ion source while converging the ion beam, and reduces the divergence of the ion beam due to the space charge effect as compared to an electrostatic quadrupole lens. The use of the magnetic quadrupole lens makes it possible to utilize to a maximum extent the ion beam extracted from the ion source and to restrict to a minimum the reduction in the current of the ion beam during passage of the ion beam, thereby making it possible to generate a high-energy ion beam having a large current on the order of several tens of milliamperes.
An ion implanting unit comprising:
Dependencies are inferred from the claim text.