Method for manufacturing semiconductor device

A method of manufacturing a semiconductor device, comprising the steps of:

• forming first and a second films having stepped portions on first and second underlying films adjacent to one another;
• forming a conductive film so that the first and second film having stepped portions are also covered;
• forming a first resist mask for forming mate electrodes on the conductive film and simultaneously forming a second resist mask on at least part of the conductive film corresponding to the stepped portions of the first and second films, the first and second resist masks being simultaneously formed;
• dry-etching the conductive film through the first and second resist masks to form gate electrodes while leaving the conductive film on the stepped portions of the first and second films;
• and
• removing the first and second resist masks,
• wherein upon forming a gate or wiring electrode pattern on a substrate of a semiconductor element having a steep stepped portion, the patterning is performed by forming a pattern of a material for the gate or wiring electrode on the lower portion of the stepped portion or the lower and upper flat portions thereof so that the edge of the stepped portion is simultaneously included in the pattern,
• wherein a polysilicon film is formed within the groove on the grooved substrate for a semiconductor element and the stepped portion is formed from apart of the polysilicon film projecting from the upper portion of the groove and spreading over the surface of the substrate, and
• wherein a contact hole is formed through an interlayer insulating film arranged between the polycrystalline or amorphous silicon film in the groove and a wiring electrode other than the gate or wiring electrode to form an ohmic contact between the polycrystalline or amorphous silicon film and the wiring electrode.

A method of manufacturing a semiconductor device comprising the steps of:

• forming first and second films having stepped portions on first and second underlying films adjacent to another;
• forming a conductive film so that the first and second films having stepped portions are also covered;
• forming a first resist mask for forming gate electrodes on the conductive film and simultaneously forming a second resist mask on at least part of the conductive film corresponding to the stepped portions of the first and second films, the first and second resist masks being simultaneously formed;
• dry-etching the conductive film through the first and second resist masks to form gate electrodes while leaving the conductive film on the stepped portions of the first and second films;
• and
• removing the first and second resist masks,
• wherein upon forming a gate or wiring electrode pattern on a substrate of a semiconductor element having a steep stepped portion, the patterning is performed by forming a pattern of a material for the gate or wiring electrode on the lower portion of the stepped portion or the lower and upper flat portions thereof so that the edge of the stepped portion is simultaneously included in the pattern,
• wherein an amorphous silicon film is formed within the groove on the grooved substrate for a semiconductor element and the stepped portion is formed from part of the amorphous silicon film projecting from the upper portion of the groove and spreading over the surface of the substrate, and
• wherein a contact hole is formed through an interlayer insulating film arranged between the polycrystalline or amorphous silicon film in the groove and a wiring electrode other than the gate or wiring electrode to form an ohmic contact between the polycrystalline or amorphous silicon film and the wiring electrode.