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US 5,348,900 AGranted
Process for manufacturing a semiconductor device including heat treatment in ammonia or oxygen
AssigneeSharp Kabushiki Kaisha
InventorsAkitsu Ayukawa, Shigeo Onishi
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Abstract
A process for manufacturing a semiconductor device, including the steps of: forming a oxide film over the entire surface of a semiconductor substrate formed with a gate electrode having side walls on opposite sides thereof with intervention of a gate oxide film, followed by implanting an impurity into a predetermined region; subjecting the substrate to a first heat treatment; removing the oxide film existing in the predetermined region; and subjecting the substrate to a second heat treatment in an ammonia or oxygen gas atmosphere.
Claims7
A process for manufacturing a semiconductor device, comprising the steps of:
- forming a gate oxide film over the entire surface of a semiconductor substrate;
- forming a gate electrode on the gate oxide film;
- forming an oxide film over the entire surface of the semiconductor substrate including the gate electrode;
- using at least the gate electrode as a mask for implanting an impurity through the oxide film into a source/drain region;
- subjecting the substrate to a first heat treatment;
- removing the oxide film existing above the source/drain region;
- and
- subjecting the substrate to a second heat treatment in an ammonia or oxygen gas atmosphere.
5 more elements
Dependencies are inferred from the claim text.