Threshold switching device
AssigneeDow Corning Corporation
InventorsKeith W. Michael, Udo C. Pernisz
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Abstract
This invention relates to a method of forming a threshold switching device which exhibits negative differential resistance and to the devices formed thereby. The method comprises depositing a silicon dioxide film derived from hydrogen silsesquioxane resin between at least two electrodes and then applying a voltage above a threshold voltage across the electrodes.
Claims19
A method of forming a threshold switching device having negative differential resistance comprising
- depositing a film comprising silicon dioxide derived from hydrogen silsesquioxane resin between at least two electrodes and applying a direct current voltage above a threshold voltage for the film across the electrodes, wherein the film has a density between about 0.9 and about 2.1 g/cc.
The method of claim 9 wherein the silicon dioxide film is between about 100 and about 600 nm thick.
A method of forming a threshold switching device having negative differential resistance comprising
- depositing a film comprising silicon dioxide and one or more modifying ceramic oxides between at least two electrodes and applying a direct current voltage above a threshold voltage for the film across the electrodes, wherein the silicon oxide and a modifying ceramic oxide film is derived from hydrogen silsesquioxane resin and a modifying ceramic oxide precursor and wherein the film has a density between about 40 and about 95% of its theoretical density.
Dependencies are inferred from the claim text.