Method for manufacturing a multi-layer capacitor

A method for producing a multi-layer capacitor, comprising the steps of:

• applying a layer structure of conductor layers alternating with dielectric layers on a substrate, said conductor layers alternating as a first conductive layer of a first material and a second conductive layer of a second material, first and said second materials being mutually selectively etchable relative to each other;
• conducting a first etching to form a first opening completely through said layer structure using a first mask as an etching mask;
• conducting a second etching of said second material in said second conductive layers by selectively removing said second material in each second layer relative to said first material thereby creating first under-etchings in each second layer in said layer structure neighboring said first opening;
• conducting a third etching to form a second opening completely through in said layer structure using a second mask as a etching mask;
• conducting a fourth etching of said first material in said first conductive layers by selectively removing said first material in each first layer relative to said second material thereby creating second under-etchings in each first layer in said layer structure neighboring said second opening;
• forming a first contact in said first opening, said first contact contacting only said first material conductive layers due to said first under-etchings;
• and
• forming a second contact in said second opening, said second contact contacting only said second material conductive layers due to said second under-etchings.