Array spreading resistance probe (ASRP) method for profile extraction from semiconductor chips of cellular construction

A semiconductor scanning resistance probe responsive to an external positioning and control device for generating a resistivity current in a semiconductor device, the semiconductor scanning resistance probe comprising:

• a semiconductor substrate;
• a cantilever formed on the semiconductor substrate, the cantilever having a plurality of probe tip openings formed therethrough;
• and
• a plurality of probes, each probe being formed within a corresponding one of the probe tip openings so that a portion of each probe extends beyond the cantilever,
• whereby the resistivity current flows between probes when the plurality of probes are placed into contact with the semiconductor device by the external positioning and control device.

A semiconductor scanning resistance probe responsive to an external positioning and control device for generating a resistivity current in a semiconductor device, the semiconductor scanning resistance probe comprising:

• a semiconductor substrate having a stepped inner surface and a plurality of first openings formed therethrough;
• a support structure formed on the stepped inner surface, the support structure having a plurality of projections and a corresponding plurality of probe tip openings, each projection extending through one of the first openings and having a distal end, each probe tip opening extending through the support structure to the distal end of one projection;
• and
• a plurality of probes, each probe being formed within a corresponding one of the probe tip openings so that a portion of each probe extends beyond the distal end of said one projection,
• whereby the resistivity current flows between probes when the plurality of probes are placed into contact with the semiconductor device by the external positioning and control device.

A method of fabricating a semiconductor scanning resistance probe comprising the steps of:

• providing a semiconductor substrate having a top surface;
• forming a support structure having a plurality of probe tip openings, an outer surface, a proximate end, and a distal end and being formed on the top surface of the semiconductor substrate to produce a cantilever, each probe tip opening extending through the support structure from a trace end to a cone end, the outer surface being cone-shaped on one side of each probe tip opening so that an apex of the cone-shaped outer surface forms the cone end;
• and
• forming a plurality of probe tip means for conducting a probe current in response to the resistivity of the semiconductor device, each probe tip means corresponding to one of the plurality of probe tip openings and being formed within the corresponding one probe tip opening and on the outer surface of the support structure from the corresponding one probe tip opening to the proximate end, the probe tip means extending beyond the cone end of the support structure.

A method of fabricating a semiconductor scanning resistance probe comprising the steps of:

• providing a semiconductor substrate;
• forming a plurality of probe tip openings in the semiconductor substrate, each probe tip opening having a side wall and a bottom side;
• forming a layer of support material on the semiconductor substrate, the layer of support material covering the sidewalls of each probe tip opening while leaving the bottom side of each probe tip opening uncovered, the layer of support material having a proximate end and a distal end;
• forming a layer of first conductive material on the support material and the substrate at the bottom side of each probe tip opening, the first conductive material covering the bottom side of each probe tip opening forming a probe tip;
• etching the layer of first conductive material to form a plurality of probe tip conductors;
• and
• etching the substrate to form a cantilever.

A method of fabricating a semiconductor scanning resistance probe comprising the steps of:

• providing a semiconductor substrate;
• forming a plurality of probe tip openings in the semiconductor substrate, each probe tip opening having a side wall and a bottom side;
• forming a layer of support material on the semiconductor substrate, the layer of support material covering the sidewalls and the bottom side of each probe tip opening, the layer of support material having a proximate end and a distal end;
• forming a layer of first conductive material on the support material;
• etching the layer of first conductive material to form a plurality of probe tip conductors;
• etching the substrate to form a cantilever;
• and
• milling the layer of support material and the layer of first conductive material to form a probe tip.

A method of fabricating a semiconductor scanning resistance probe comprising the steps of:

• providing a semiconductor substrate;
• forming a plurality of probe tip openings in the semiconductor substrate, each probe tip opening having a side wall and a bottom side;
• forming a layer of support material on the semiconductor substrate, the layer of support material covering the sidewalls of each probe tip opening while leaving the bottom side of each probe tip opening uncovered, the layer of support material having a side;
• forming a layer of first conductive material on the support material and the substrate at the bottom side of each probe tip opening, the first conductive material covering the bottom side of each probe tip opening forming a probe tip;
• etching the layer of first conductive material to form a plurality of probe tip conductors;
• and
• etching the substrate to form a diaphragm.

A method of fabricating a semiconductor scanning resistance probe comprising the steps of:

• providing a semiconductor substrate;
• forming a plurality of probe tip openings in the semiconductor substrate, each probe tip opening having a side wall and a bottom side;
• forming a layer of support material on the semiconductor substrate, the layer of support material covering the sidewalls and the bottom side of each probe tip opening, the layer of support material having a side;
• forming a layer of first conductive material on the support material;
• etching the layer of first conductive material to form a plurality of probe tip conductors;
• etching the substrate to form a diaphragm;
• and
• milling the layer of support material and the layer of first conductive material to form a probe tip.