Semiconductor non-corrosive metal overcoat
AssigneeTexas Instruments Incorporated
InventorsJames R. Thomas, Larry W. Nye, Richard M. Brook
Life of this patent
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Abstract
The invention is a method of preventing active metal circuit corrosion on a semiconductor device. Non-corrosive multi-layers of metals are applied over the entire surface of a semiconductor, and then the multi-layers are etched to separate the portions on device contacts from the portions on the non-contact areas of the semiconductor device.
Claims4
A method for eliminating active metal circuit corrosion through the surface passivation layer and around contacts on a semiconductor device, comprising the steps of:
- applying non-corrosive multi-layers of at least two different metals over the entire surface of the semiconductor device, including the passivation layer, and over the contacts on the semiconductor device;
- etching the non-corrosive multi-layers to separate the non-corrosive multi-layers on the contacts from the non-corrosive multi-layers on the passivation layer to electrically isolate the contacts and the non-corrosive multi-layers thereon from the non-corrosive multi-layers on the passivation layer;
- and
- leaving the non-corrosive multi-layers on the passivation layer on the completed semiconductor device.
A method for eliminating active metal circuit corrosion through the surface passivation layer, and around contacts on a semiconductor device, comprising the steps of:
- applying non-corrosive multi-layers of metals over the entire surface of the semiconductor device, including the passivation layer, and over the contacts on the semiconductor device;
- etching the non-corrosive multi-layers to separate the non-corrosive multi-layers on the contacts from the non-corrosive multi-layers on the passivation layer to electrically isolate the contacts and the non-corrosive multi-layers thereon from the non-corrosive multi-layers on the passivation layer;
- leaving the non-corrosive multi-layers on the passivation layer on the completed semiconductor device.
Dependencies are inferred from the claim text.