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AssigneeThe United States of America as represented by the Secretary of the Navy
InventorRobert W. Gedridge, Jr.
Estimating the term…
Chemical vapor deposition process for producing indium-containing semiconductor materials, particularly III/V indium-containing semiconductor materials, using triisopropylindium as the source of indium. In the process a flow of triisopropylindium and a flow of a group V source or precursor, e.g. AsH.sub.3, are directed into a reactor in contact with a heated substrate. The triisopropylindium and group V precursor are at least partially decomposed, depositing by chemical vapor deposition an indium-containing III/V semiconductor material on the substrate. The result is lower pyrolysis temperatures and less carbon impurity incorporation into the indium-containing semiconductor material than when commercially available indium sources are used.
In a process of forming an indium-containing semiconductor material by chemical vapor deposition the improvement comprising using triisopropylindium as a source of indium for film growth temperatures between 100.degree. C. to less than or equal to 250.degree. C.
A process for forming III/V indium-containing semiconductor materials which comprises reacting triisopropylindium and one or more sources of a group V material by chemical vapor deposition at temperatures between 100.degree. C. to less than or equal to 250.degree. C. and depositing a III/V semiconductor material without substantial unintentional impurity incorporation.
A process for forming III/V indium-containing semiconductor materials which comprises providing a carrier gas containing triisopropylindium and providing a carrier gas containing a source of a group V material, providing a reactor for chemical vapor deposition containing a substrate heated to between 100.degree. C. to less than or equal to 250.degree. C., passing said carrier gas containing triisopropylindium into said reactor, passing said carrier gas containing said source of a group V material into said reactor, heating said gases at said temperatures, and depositing an indium-containing III/V semiconductor on said substrate, said semiconductor being substantially free of unintentional impurities.
Dependencies are inferred from the claim text.