Method of fabricating Shannon Cell circuits
AssigneeTexas Instruments Incorporated
InventorsJohn N. Randall, Gary A. Frazier, Rajni J. Aggarwal
Life of this patent
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Abstract
A quantum effect device implementation of the Shannon Decomposition Function in the form of a Shannon Cell is provided in which a first quantum dot logic unit (50) is coupled between the X input and the output of the Shannon Cell. A second quantum dot logic unit (52) is coupled between the Y input and the output of the Shannon Cell. The control input to the Shannon Cell is coupled to both the first and second quantum dot logic units (50 and 52) such that current flows through the appropriate quantum dot logic unit (50 or 52) depending upon the logic state of the control input.
Claims3
A method of fabricating a quantum-effect implementation of Shannon Cell, comprising the steps of:
- providing a semiconductor substrate;
- forming a first barrier layer overlying the substrate;
- forming a quantum layer overlying the first barrier layer;
- forming a second barrier layer overlying the quantum layer;
- etching through said first and second barrier layers and said quantum layer to separate a first quantum dot logic unit area from a second quantum dot logic unit area;
- etching three trenches in the first quantum dot logic unit area to define a first filter quantum dot and a first control quantum dot;
- etching three trenches in the second quantum dot logic unit area to define a second filter quantum dot and a second control quantum dot;
- regrowing heterojunction tunnel barriers in the trenches;
- forming an X-input contact conductively coupled to the quantum well in the first quantum dot logic unit area;
- forming a first control contact insulatively adjacent the first control quantum dot, such that potentials placed on the first control contact align or misalign electron energy states within the first control quantum dot with electron energy states of the first filter quantum dot;
- forming a first output contact conductively coupled to the quantum well opposite the first filter quantum dot and the first control quantum dot from the X-input contact;
- forming a Y-input contact conductively coupled to the quantum well in the second quantum dot logic unit area;
- forming a second control contact insulatively adjacent the second control quantum dot and coupled to the first control contact, such that potentials placed on the second control contact align or misalign electron energy states within the second control quantum dot with electron energy states of the second filter quantum dot;
- and
- forming a second output contact conductively coupled to the quantum well opposite the second filter quantum dot and the second control quantum dot from the Y-input contact, the second output contact coupled to said first output contact.
A method of fabricating a quantum-effect implementation of Shannon Cell, comprising the steps of:
- providing a semiconductor substrate;
- forming a first barrier layer overlying the substrate;
- forming a first quantum layer overlying the first barrier layer;
- forming a second barrier layer overlying the first quantum layer;
- forming a second quantum layer overlying the second barrier layer;
- etching a contact opening through the first and second barrier layers and the first and second quantum layers to the semiconductor substrate;
- etching the second quantum layer to define an X-well and a Y-well, the X-well and Y-well having different thicknesses and spaced apart by etching through to the second barrier layer between the X-well and Y-well;
- forming an insulating layer overlying the X-well, the Y-well, the contact opening, and the space between the X-well and Y-well;
- forming a control contact conductively coupled to the semiconductor substrate at the contact opening;
- forming an X-input contact insulatively adjacent to the X-well;
- forming a Y-input contact insulatively adjacent to the Y-well;
- and
- forming an output contact conductively coupled to the first quantum layer, such that potentials placed on the control contact affect electron energy states within the first quantum layer, thereby causing alignment or misalignment with the energy states within the X-well and Y-well, such that current flows either from the X-input contact or the Y-input contact to the output contact.
Dependencies are inferred from the claim text.