Method of making avalanche photodiode

Abstract

A method of making an avalanche photodiode includes depositing a light-absorbing semiconductor layer of a first conductivity type on a semiconductor substrate of the first conductivity type; successively depositing multiple pairs of semiconductor layers on the light-absorbing layer, each of the pairs including a first semiconductor layer of the first conductivity type containing a first dopant impurity concentration and a second semiconductor layer of the first conductivity type containing a second dopant impurity concentration smaller than the first dopant impurity concentration; and forming a semiconductor light-receiving layer of a second conductivity type on the pairs of layers to form a pn junction with the pairs of layers.

Dependencies are inferred from the claim text.