Process for depositing a copper containing layer I
AssigneeKali-Chemie Aktiengesellschaft
InventorsThomas Kruck, Christian Terfloth
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Abstract
The deposition of a copper-containing layer on a substrate by decomposing, particularly by a CVD process, a compound corresponding to the formula (I) RO--Cu--L (I) in which R represents a 1-aryl lower alkyl group, a branched, optionally substituted alkyl group with 3 to 6 carbon atoms, or an aryl group, and L represents (C1 to C6-alkyl)isonitrile, aryl isonitrile, carbon monoxide, dialkylaminodifluorophosphane, organyl difluorophosphane, triaryl phosphane, trialkyl phosphane, trifluorophosphane, or trichlorophosphane, is described, together with previously unknown compounds of formula (I) which may be used in the process.
Claims29
A process for depositing a copper-containing layer on a substrate, said process comprising decomposing in the gas or vapor phase and in the presence of said substrate a compound corresponding to the formula (I)
- RO--Cu--L (I)
- wherein
- R represents a 1-aryl lower alkyl group, a branched, optionally substituted alkyl group with 3 to 6 carbon atoms, or an aryl group, and
- L represents (C1 to C6-alkyl)isonitrile, aryl isonitrile, carbon monoxide, dialkylaminodifluorophosphane, organyl difluorophosphane, triaryl phosphane, trialkyl phosphane, trifluorophosphane, or trichlorophosphane,
- whereby a copper-containing layer is applied to said substrate.
A process for depositing a copper-containing layer on a substrate, said process comprising decomposing in the presence of said substrate a compound corresponding to the formula (I)
- RO--Cu--L (I)
- wherein
- R represents a 1-aryl lower alkyl group a branched, optionally substituted alkyl group with 3 to 6 carbon atoms, or an aryl group, and
- L represents (C1 to C6-alkyl)isonitrile aryl isonitrile, carbon monoxide, dialkylaminodifluorophosphane, organyl difluorophosphane, triaryl phosphane, trialkyl phosphane, trifluorophosphane, or trichlorophosphane,
- wherein said decomposing step is effected under an inert gas atmosphere or a reducing gas atmosphere, whereby a copper-containing layer containing copper essentially in the form of metallic copper is deposited on said substrate.
A process for depositing a copper-containing layer on a substrate, said process comprising decomposing in the presence of said substrate a compound corresponding to the formula (I)
- RO--Cu--L (I)
- wherein
- R represents a 1-aryl lower alkyl group, a branched, optionally substituted alkyl group with 3 to 6 carbon atoms, or an aryl group and
- L represents (C1 to C6-alkyl)isonitrile, aryl isonitrile, carbon monoxide, dialkylaminodifluorophosphane, organyl difluorophosphane, triaryl phosphane, trialkyl phosphane, trifluorophosphane, or trichlorophosphane,
- wherein said decomposing step is effected in the presence of a reactive oxidizing or hydrolyzing gas atmosphere, whereby a copper-containing layer containing copper essentially in the form of copper oxide is deposited on said substrate.
A process for depositing a copper-containing layer on a substrate, said process comprising decomposing in the presence of said substrate a compound corresponding to the formula (I)
- RO--Cu--L (I)
- wherein
- R represents a 1-aryl lower alkyl group, a branched, optionally substituted alkyl group with 3 to 6 carbon atoms, or an aryl group, and
- L represents (C1 to C6-alkyl)isonitrile, aryl isonitrile, carbon monoxide, dialkylaminodifluorophosphane, organyl difluorophosphane, triaryl phosphane, trialkyl phosphane, trifluorophosphane, or trichlorophosphane,
- wherein said compound of formula (I) and at least one compound of at least one metal other than copper are decomposed, thereby to deposit layers containing copper and at least one other metal on said substrate.
A compound corresponding to the formula (I)
- RO--Cu--L (I)
- wherein
- R represents a 1-aryl lower alkyl group, a branched, optionally substituted alkyl group with 3 to 6 carbon atoms, or an aryl group, and
- L represents (C1 to C6-alkyl)isonitrile, aryl isonitrile, carbon monoxide, dialkylaminodifluorophosphane, organyl difluorophosphane, triaryl phosphane, trialkyl phosphane, trifluorophosphane, or trichlorophosphane;
- with the exception of compounds in which R represents t-butyl, and L represents t-butyl isonitrile, carbon monoxide or triethylphosphane.
2-trifluoromethylpropan-2-oxy-copper or perfluoro-t-butoxy-copper.
Dependencies are inferred from the claim text.