Tungsten metallization of CVD diamond
AssigneeGeneral Electric Company
InventorsKenneth P. Zarnoch, Charles D. Iacovangelo
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Abstract
A process for significantly improving the adhesion of a refractory metal deposited on diamond is disclosed. The process involves depositing an initial thin metal coating by low pressure chemical vapor deposition on diamond, heat treating in a non-oxidizing environment, and continuing the deposition of the initial metal coating until a desired thickness is achieved. Diamond sheets that have undergone the inventive process where 15 micrometers of tungsten are deposited, exhibit tungsten adhesive values in excess of 10,000 pounds per square inch.
Claims16
A process for improving adhesion of metal coatings on diamond surfaces comprising:
- depositing an initial uniform thin coating of a refractory metal on a diamond surface, wherein the initial coating of the refractory metal is about 10-10,000 angstroms;
- heat treating said initial coating to form a refractory metal-carbon bonding layer with said diamond;
- and
- then continuing deposition of said refractory metal.
A process for improving adhesion of tungsten on diamond comprising depositing by low pressure chemical vapor deposition at about 450.degree. C. and at about 0.5 torr an initial tungsten coating of about 200 .ANG. on a diamond surface substantially free of contaminants;
- heating said diamond to about 900.degree.-1000.degree. C. in a non-oxidizing atmosphere until a tungsten-carbon bonding layer forms with said diamond;
- and depositing additional tungsten at about 650.degree. C. and at about 0.5 torr.
A process for improving adhesion of metal to apertures in diamond comprising depositing by low pressure chemical vapor deposition in a non-oxidizing atmosphere about a 10-10,000 .ANG. thick layer of a refractory metal at about 300.degree.-700.degree. C. and at about 0.1-3.0 torr on diamond surfaces and within said apertures;
- heat treating the deposit thus formed in a non-oxidizing atmosphere at a temperature of about 700.degree.-1200.degree. C. to form a refractory metal-carbon bonding layer with said diamond;
- then continuing deposition of said refractory metal at about 400.degree.-800.degree. C. and at about 0.1-3.0 torr to substantially fill said apertures.
Dependencies are inferred from the claim text.