Device for thermal treatment and film forming process
AssigneeKabushiki Kaisha Toshiba
InventorsShinji Nunotani, Koichi Takahashi, Naoto Miyashita
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AssigneeKabushiki Kaisha Toshiba
InventorsShinji Nunotani, Koichi Takahashi, Naoto Miyashita
Estimating the term…
A device for a thermal treatment process and a film forming process includes a chamber for forming a thin-film on a semiconductor substrate under high temperatures, a heater positioned to enclose the outer periphery of the chamber, for heating the inside of the chamber to a high temperature; and insulator positioned to enclose the outer periphery of the heater. The device further has a first space formed between the chamber and the heater, a second space formed between the heater and the insulator, first and second exhaust sections provided for exhausting air from the first and second spaces. In the device, prior to inserting the semiconductor substrate into and removing the semiconductor substrate from the chamber, high temperature air is exhausted from the first and second spaces by the first and second exhaust sections, respectively, to cool inside of the chamber.
A device for a thermal treatment process and a film forming process comprising:
Dependencies are inferred from the claim text.