Fifo with word line match circuits for flag generation
AssigneeAT&T Bell Laboratories
InventorsLarry R. Fenstermaker, Kevin J. O'Connor
Life of this patent
Estimating the term…
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AssigneeAT&T Bell Laboratories
InventorsLarry R. Fenstermaker, Kevin J. O'Connor
Estimating the term…
A first in, first out memory (FIFO) includes a multi-port memory array, which is accessed for read/write operations by activating a selected read or write word line. The read word line is controlled by a read shift register, and the write word line is controlled by a write shift register. In order to generate "full" and "empty" flags, the voltage state of read and write word lines are determined in "match circuits", which compare the locations of the read and write pointers. This eliminates the use of counters, and allows the shift registers and word line match circuits to be an integral part of a single-block regular structure. Furthermore, it allows the FIFO to be readily expanded to multiple numbers of words and bits per word.
A circuit including a first in, first out memory comprising an array of memory cells arranged in rows that are accessed by word lines that are activated by a read pointer generator when performing a read operation, and by a write pointer generator when performing a write operation,
An integrated circuit including a first in, first out memory comprising an array of memory cells arranged in rows that are accessed by word lines that are activated by a read pointer shift register when performing a read operation, and by a write pointer shift register when performing a write operation,
Dependencies are inferred from the claim text.