FET having two gate bonding pads for use in high frequency oscillator

A high frequency signal oscillator comprising:

• a field effect transistor including a source, a source bonding pad connected to said source, a drain, a drain bonding pad connected to said drain, a gate, and two gate bonding pads each connected to the ends, respectively, of said gate;
• bias means for supplying bias voltages, respectively, to each electrode of said field effect transistor from power supply;
• a dielectric resonator connected through a coupling line to one of said gate bonding pads;
• an output terminal of high frequency signal connected to the other of said gate bonding pads;
• a capacitive reactance connected to said source bonding pad;
• and
• grounding means for said high frequency signal for grounding said drain bonding pad.

A high frequency signal oscillator comprising:

• a field effect transistor including a source, a source bonding pad connected to said source, a drain, a drain bonding pad connected to said drain, a gate, and two gate bonding pads connected to one end of said gate, and a resistor interconnecting between said two gate bonding pads;
• bias means for supplying bias voltages, respectively, to each electrode of said field effect transistor from power supply;
• a dielectric resonator connected through a coupling line to one of said gate bonding pads;
• an output terminal of high frequency signal connected to the other of said gate bonding pads;
• a capacitive reactance connected to said source bonding pad;
• and
• grounding means for said high frequency signal for grounding said drain bonding pad.

A high frequency signal oscillator comprising:

• a field effect transistor chip including a source, a source bonding pad connected to said source, a drain, a drain bonding pad connected to said drain, a gate, and two gate bonding pads each connected to the ends, respectively, of said gate;
• a ceramic package enclosing said field effect transistor chip therein;
• a source terminal connected to said source bonding pad and outgoing from said ceramic package;
• a drain terminal connected to said drain bonding pad and outgoing from said ceramic package;
• two gate terminals each connected to said two gate bonding pads, respectively, and outgoing from said ceramic package;
• bias means for supplying bias voltages each to said source, drain and gate terminals, respectively;
• a dielectric resonator connected through a coupling line to one of said gate terminals;
• an output terminal of high frequency signal connected to the other of said gate terminals;
• a capacitive reactance connected to said source terminal;
• and
• grounding means for said high frequency signal for grounding said drain terminal.

A high frequency signal oscillator comprising:

• a field effect transistor chip including a source, a source bonding pad connected to said source, a drain, a drain bonding pad connected to said drain, a gate, and two gate bonding pads connected to one end of said gate, and a resistor interconnecting between said two gate bonding pads;
• a ceramic package containing said field effect transistor chip therein;
• a source terminal connected to said source bonding pad and outgoing from said ceramic package;
• a drain terminal connected to said drain bonding pad and outgoing from said ceramic package;
• two gate terminals each connected to said two gate bonding pads, respectively, and outgoing from said ceramic package;
• bias means for supplying bias voltages each to said source, drain and gate terminals, respectively;
• a dielectric resonator connected through a coupling line to one of said gate terminals;
• an output terminal of high frequency signal connected to the other of said gate terminals;
• a capacitive reactance connected to said source terminal;
• and
• grounding means for said high frequency signal for grounding said drain terminal.