Structure for shielding conductors

A structure comprising:

• a substrate;
• a plurality of transistors overlying the substrate;
• a first dielectric layer overlying the plurality of transistors;
• a first conductive region overlying the first dielectric layer;
• a second conductive region overlying the first dielectric layer, the second conductive regions being physically separated from the first conductive region by a recess region;
• a second dielectric layer overlying both the first conductive region and the second conductive region, the second dielectric layer having a first surface which overlies the first conductive region and the second conductive region and a second surface which lies within the recess region, the first surface being further separated from the substrate than the second surface;
• and
• a conductive layer adjacent at least the second surface of the second dielectric layer, the conductive layer being biased to a voltage potential which improves electrical isolation between the first conductive region and the second conductive region.

A semiconductor structure comprising:

• a substrate;
• a plurality of physically separated conductive regions overlying the substrate, a recessed region being located between each set of adjacent conductive regions in the plurality of physically separated conductive regions to form a plurality of recessed regions;
• a dielectric isolation layer overlying the plurality of physically separated conductive regions and at least partially lying within each of the recessed regions within the plurality of recessed regions;
• and
• a contiguous conductive shielding layer both overlying the dielectric isolation layer and within each of the recessed regions within the plurality of recessed regions, the contiguous conductive shielding layer being used to reduce electrical coupling between adjacent physically separated conductive regions.