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US 5,345,092 AGranted
Light emitting diode including active layer having first and second active regions
AssigneeKabushiki Kaisha Toshiba
InventorHaruki Kurihara
Life of this patent
Estimating the term…
Abstract
A light emitting diode comprises a semiconductor substrate of compound semiconductor, an active layer provided above the semiconductor substrate and including first and second active regions, the first active region being spaced apart from the second active region thereby controlling diffusion of an injected minority carrier in a radial direction, the first active region substantially operating as a light emitting region, and a window for emitting light generated at the first active region.
Claims11
A light emitting diode comprising:
- a semiconductor substrate of a first conductivity type;
- a current blocking layer of a second conductivity type provided on said semiconductor substrate;
- a recessed portion formed in said current blocking layer so as to extend to said semiconductor substrate;
- a first cladding layer of said first conductivity type including a first cladding region buried in said recessed portion, a second cladding region provided on said current blocking layer, and a constricted region located at a peripheral portion of and surrounding said recessed portion;
- an active layer of said first conductivity type including a first active region, provided on said first cladding region, substantially operating as a light emitting region, and a second active region provided on said second cladding region, said second active region being separated outward from said first active region by said constricted region;
- a second cladding layer of said second conductivity type provided over said active layer so as to cover said first cladding layer;
- an ohmic contact layer provided on said second cladding layer;
- and
- a window provided in said ohmic contact layer.
6 more elements
A light emitting diode comprising:
- a semiconductor substrate of a first conductivity type having a first surface, said semiconductor substrate including a projected portion having a second surface protruding from said first surface;
- a buffer layer of said first conductivity type, provided over said semiconductor substrate, including a first buffer region provided on said second surface, a second buffer region provided on said first surface, and a constricted region located at a peripheral portion of said projected portion;
- an active layer of a second conductivity type including a first active region, provided on said first buffer region, substantially operating as a light emitting region, and a second active region provided on said second buffer region, said second active region being separated outward from said first active region by said constricted region;
- a mesa-shaped cladding layer of said second conductivity type provided over said active layer so as to cover said buffer layer, said constricted region forming a pn junction between said buffer layer and said mesa-shaped cladding layer;
- an ohmic contact layer provided on an opposite surface of said semiconductor substrate;
- and
- a window provided in said ohmic contact layer.
4 more elements
Dependencies are inferred from the claim text.