Method of and apparatus for processing a workpiece in plasma

An apparatus for processing a semiconductor device in a plasma, comprising:

• a reaction chamber for introducing a reaction gas therein;
• a table disposed in said reaction chamber for supporting a semiconductor device thereon;
• a microwave oscillator connected to said reaction chamber for generating and introducing a microwave into said reaction chamber to produce a plasma in said reaction chamber for activating the reaction gas to process the semiconductor device in said reaction chamber;
• magnetic means disposed around said reaction chamber for generating a magnetic field in said reaction chamber while creating a region with substantially no flux density in said magnetic field wherein said plasma is uniformly applied to said workpiece;
• and
• biasing means for applying a bias voltage to said table.

A method of processing a workpiece in a plasma, comprising the steps of:

• introducing a reaction gas into a reaction chamber;
• introducing a microwave into said reaction chamber to produce a plasma therein for activating the reaction gas;
• processing a workpiece supported on a table in said reaction chamber with the activated reaction gas;
• and
• generating a magnetic field in said reaction chamber while creating a region with substantially no flux density in said magnetic field wherein said plasma is uniformly applied to said workpiece.

A method of processing a workpiece in a plasma, comprising the steps of:

• introducing a reaction gas in a reaction chamber;
• introducing a microwave into said reaction chamber to produce a plasma therein for activating the reaction gas;
• processing a workpiece supported on a table in said reaction chamber with the activated reaction gas;
• and
• energizing a pair of coils disposed around said reaction chamber to generate respective magnetic fields in opposite directions in said reaction chamber, said magnetic fields cancelling out each other creating a region with substantially no flux density in said magnetic fields between said coils wherein said plasma is uniformly applied to said workpiece.