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US 5,344,526 AGranted
Method for etching diamond
AssigneeSumitomo Electric Industries, Ltd.
InventorsYoshiki Nishibayashi, Shinichi Shikata
Life of this patent
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Abstract
A diamond surface is selectively etched by forming a mask on a surface of diamond, and etching the diamond surface with a mixture of oxygen-containing gas and an inert gas, in which a concentration of oxygen in terms of O.sub.2 is from 0.01 to 20% based on the whole volume of the mixture.
Claims6
A method for etching a diamond surface comprising steps of forming a mask on a surface of diamond, and etching the diamond surface with a mixture of oxygen-containing gas and an inert gas, wherein a concentration of oxygen in terms of O.sub.2 is from 0.01 to 20% based on the whole volume of the mixture.
Dependencies are inferred from the claim text.