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US 5,344,523 AGranted
Overpressure-protected, polysilicon, capacitive differential pressure sensor and method of making the same
AssigneeThe Foxboro Comany
InventorsClifford D. Fung, Kevin H. L. Chau
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Abstract
A capacitive differential pressure sensing device with pressure overrange protection and a method of making the same are described. The device employs a doped polysilicon diaphragm overlying a cavity in a doped single crystal silicon wafer having a port extending into the cavity from the opposite side. The cavity floor serves as an overrange protector.
Claims6
A method for manufacturing a capacitive differential pressure sensing device comprising the steps of,
- forming a cavity in the top surface of a single crystal silicon wafer to a prescribed depth with a floor of generally predetermined area at said prescribed depth, said floor lying parallel to said upper surface,
- filling said cavity with a sacrificial spacer material so that the upper surface of the filled cavity forms a smooth continuous surface with the upper surface of said wafer,
- depositing on said wafer top surface a layer of polysilicon extending over the filled cavity,
- selectively doping a portion of the polysilicon layer overlaying the filled cavity to form a conductive p+ region,
- anisotropically etching in the bottom surface of said wafer, parallel to said top surface, an opening creating an open passage to the floor of said filled cavity, the opening in the floor of said cavity being located away from the center of said floor, and
- removing said spacer material in said cavity through said passage.
3 more elements
Dependencies are inferred from the claim text.