Method for lift-off of epitaxial layers and applications thereof
AssigneeBandgap Technology Corporation
InventorVirginia Houlding
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Abstract
The present invention provides for improved methods of fabricating layered materials which are epitaxially grown on an electrically conductive single crystal substrate. The improved methods comprise the step of applying an electrochemical potential between the layered material/substrate and a counter electrode to oxidize and dissolve a thin etch layer positioned between the film and substrate, to thereby free the layered material from the substrate.
Claims18
A process for selectively freeing an epitaxial film from an electrically conductive single crystal substrate upon which it was grown comprising:
- a) placing the film and substrate into an etching solution;
- and
- b) applying an electrochemical potential between the film/substrate and a counter electrode to oxidize and dissolve a thin etch layer positioned between the film and substrate to thereby separate the film and the substrate from each other.
A process for selectively freeing an epitaxial film from an electrically conductive single crystal substrate upon which it was grown comprising:
- a) attaching a rigid transfer substrate onto the epitaxial film with an adhesive, wherein the transfer substrate and the adhesive are insoluble in an etch solution;
- b) placing the transfer substrate, film and substrate into an etching solution;
- and
- c) applying an electrochemical potential between the transfer substrate/film/substrate and a counter electrode to dissolve a thin etch layer positioned between the film and substrate to thereby separate the transfer substrate/film and the substrate from each other.
Dependencies are inferred from the claim text.