US 5,344,499 A · Electric device of hydrogenated amorphous silicon and method of manufacture

Abstract

The electro-migration of electrode metal takes place under an elevated temperature condition in amorphous silicon devices having conventional PI-type, NI-type, or PIN-type hydrogenated amorphous silicon layered structures, which substantially degrades the electrical characteristics of the devices. This problem is solved by forming a chemically inactive layer consisting mainly of amorphous silicon oxide on the surface of amorphous silicon layer by an aqueous washing and drying process, to establish electrical contacts through the chemically inactive layer between the hydrogenated amorphous silicon layer and either a collector electrode or a transparent electrode. This structure not only prevents such electromigration of electrode metal, but it also allows a greater freedom for choosing a material for the collector electrode.

Claims14

Dependent claims

An electric device utilizing hydrogenated amorphous silicon and characterized by comprising at least:

a hydrogenated amorphous silicon layer;
a chemically inactive layer which is formed on a surface of said hydrogenated amorphous silicon layer only by immersing said hydrogenated amorphous silicon layer in water and then drying said hydrogenated amorphous silicon layer under light irradiation, and is composed of hydrogenated amorphous silicon and SiO.sub.X and also is 50 to 300 .ANG. in thickness:
and
an electrode layer which is formed on said chemically inactive layer by a vacuum deposition method.

1 more element

Dependencies are inferred from the claim text.

Electric device of hydrogenated amorphous silicon and method of manufacture

Life of this patent

Electric device of hydrogenated amorphous silicon and method of manufacture

Life of this patent

Abstract

Claims14