Apparatus for ion implantation including contactless cooling and beam current measurement means

An apparatus for ion implantation comprising:

• a wafer disk having wafer receiving faces, a wafer being mounted on each of said wafer receiving faces;
• a cooling means for cooling said wafer disk through heat radiation;
• and
• a bearing means capable of magnetic levitation of said wafer disk.

An apparatus for ion implantation, comprising:

• a wafer disk having wafer receiving faces, a wafer being mounted on each of said wafer receiving faces;
• an electron shower device including a filament for emitting electrons toward an area of said wafer disk which is to be irradiated with an ion beam;
• an electrode container that covers a peripheral portion of said wafer disk in a contactless manner, said electrode container and said electron shower device being connected by a dc power supply;
• and
• an ammeter connected between said dc power supply and ground, whereby an ion beam current striking said wafer disk is determined by a current flowing from said electrode container and through said ammeter.