X-ray exposure apparatus
AssigneeCanon Kabushiki Kaisha
InventorsMasami Hayashida, Yasuaki Fukuda, Yutaka Watanabe
Life of this patent
Estimating the term…
Abstract
An X-ray apparatus includes an X-ray pickup window through which synchrotron radiation light is projected, the X-ray pickup window having an X-ray transmission film; and a correcting system for correcting an intensity distribution of the synchrotron radiation light; wherein the X-ray transmission film has at least one of a film thickness distribution and a transmissivity distribution changing substantially in a predetermined direction; and wherein the X-ray transmission film is so disposed that the predetermined direction is substantially aligned with the direction of change of the intensity distribution of the synchrotron radiation light.
Claims16
An x-ray apparatus, comprising:
- an X-ray window through which synchrotron radiation light is projected, said X-ray window having an X-ray transmission film;
- and
- correcting means for correcting an intensity distribution of the synchrotron radiation light,
- wherein said X-ray transmission film has at least one of a film thickness distribution and a transmissivity distribution changing substantially in a predetermined direction and said X-ray transmission film is so disposed that the predetermined direction is substantially aligned with a direction of change of the intensity distribution of the synchrotron radiation light.
An x-ray exposure apparatus, comprising:
- holding means for holding a substrate to be exposed;
- an X-ray window through which synchrotron radiation light is projected, said X-ray window having an X-ray transmission film;
- and
- correcting means for correcting an intensity distribution of the synchrotron radiation light,
- wherein said X-ray transmission film has at least one of a film thickness distribution and a transmissivity distribution changing substantially in a predetermined direction and said X-ray transmission film is so disposed that the predetermined direction is substantially aligned with a direction of change of the intensity distribution of the synchrotron radiation light.
A method of manufacturing a semiconductor device with X-ray exposure, comprising the steps of:
- holding a mask having a pattern and a wafer to be exposed to the pattern of the mask;
- projecting synchrotron radiation light through an X-ray window having an X-ray transmission film, wherein the X-ray transmission film has at least one of a film thickness distribution and a transmissivity distribution changing substantially in a predetermined direction, and the X-ray transmission film is so disposed that the predetermined direction is substantially aligned with a direction of change of the intensity distribution of the synchrotron radiation light;
- correcting the intensity distribution of the synchrotron radiation light;
- and
- transferring the pattern of the mask to the wafer with the synchrotron radiation light.
An X-ray apparatus, comprising:
- an X-ray window through which synchrotron radiation light is projected, said X-ray window having an X-ray transmission film;
- and
- correcting means for correcting an intensity distribution of the synchrotron radiation light,
- wherein said X-ray transmission film has at least one of a film thickness distribution and a transmissivity distribution changing substantially in a predetermined direction and said X-ray transmission film is so disposed that the predetermined direction is substantially aligned with a direction of correction of the intensity distribution.
An X-ray exposure apparatus, comprising:
- holding means for holding a substrate to be exposed;
- an X-ray window through which synchrotron radiation light is projected, said X-ray window having an X-ray transmission film;
- and
- correcting means for correcting an intensity distribution of the synchrotron radiation light,
- wherein said X-ray transmission film has at least one of a film thickness distribution and a transmissivity distribution changing substantially in a specified direction and said X-ray transmission film is so disposed that the specified direction is substantially aligned with a direction of correction of the intensity distribution.
A method of manufacturing a semiconductor device with X-ray exposure, comprising the steps of:
- holding a mask having a pattern and a wafer to be exposed to the pattern of the mask;
- projecting synchrotron radiation light through an X-ray window having an X-ray transmission film, wherein the X-ray transmission film has at least one of a film thickness distribution and a transmissivity distribution changing substantially in a predetermined direction;
- correcting the intensity distribution of the synchrotron radiation light along the predetermined direction of the X-ray transmission film;
- and
- transferring the pattern of the mask to the wafer with the synchrotron radiation light.
Dependencies are inferred from the claim text.