Verifying dynamic memory refresh
AssigneeMicron Semiconductor, Inc.
InventorsTroy A. Manning, William R. Bachand
Life of this patent
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AssigneeMicron Semiconductor, Inc.
InventorsTroy A. Manning, William R. Bachand
Estimating the term…
A dynamic memory having self refreshing capability performed without external strobing, is interruptable and can be strobed to initiate a refresh cycle for testing interrupt response timing. In operation of such a dynamic memory, interruption of a self refresh cycle precedes initiation of a read or write cycle by a time t.sub.RPS, sufficient for row precharge. Although t.sub.RPS can be estimated based on worst case analysis, lower t.sub.RPS characteristics can be guaranteed, resulting in higher yields, by measuring t.sub.RPS during memory fabrication using circuits and methods disclosed. In an alternate embodiment, output of a signal indicative of the beginning of a refresh cycle is enabled by a test signal.
A system for providing an output data signal, the system responsive to a first control signal, a second control signal, and an input data signal, the system comprising:
A method for verifying refreshing of a cell of a system capable of self refreshing, the method comprising the steps of:
A method for verifying refreshing of a cell of a system capable of self refreshing, the method comprising the steps of:
A system for providing an output data signal, the system responsive to a first control signal, a second control signal, an input data signal, and a test signal, the system comprising:
A dynamic memory, responsive to an address signal, and an address strobe having a transition, the memory providing a data signal, the memory comprising:
A dynamic memory, responsive to an address signal, and an address strobe having a transition, the memory providing a data signal, the memory comprising:
Dependencies are inferred from the claim text.