Semiconductor cold electron emission device
AssigneeThe United States of America as represented by the Secretary of the Navy
InventorMax N. Yoder
Life of this patent
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Abstract
A semiconductor cold electron emission device comprising a type I heterojunction formed of a P-type semiconductor mixture of AlN and a N-type semiconductor mixture of SiC which junction is forward biased so that electrons are monoenergetically emitted from the P-type semiconductor mixture.
Claims10
A cold electron emission device comprising:
- a forward biased heterojunction semiconductor in which said heterojunction is formed by a P-type material which is SiC and an N-type material which is AlN;
- a first metallic ohmic contact connected to said P-type material at one end of said junction;
- a second metal ohmic contact connected to said N-type material at an opposite end of said junction;
- and
- a voltage source with a positive and negative terminal;
- said positive terminal being connected to said first ohmic contact and said negative terminal being connected to said second ohmic contact.
A semiconductor cold electron emission device comprising:
- an input terminal;
- an output terminal;
- a PN heterojunction formed at the interface of an N-type AlN mixture and a P-type SiC mixture and connected between said input terminal and said output terminal;
- and means connected between said input and output terminals to forward bias said heterojunction.
The device of claim 8 in which said output terminal consists of an ohmic metallic grid structure which is connected to the P-type mixture and is controlled by the bias means.
A cold electron emission device comprising:
- a forward biased heterojunction semiconductor in which said heterojunction is formed by a P-type material of AlSiCN and an N-type material of AlSiCN which has a higher AlN mole fraction than that of said P-type material;
- a first metallic ohmic contact connected to said P-type material at one end of said junction;
- a second metallic ohmic contact connected to said N-type material at an opposite end of said junction;
- and a voltage source with a positive and negative terminal;
- said positive terminal being connected to said first ohmic contact and said negative terminal being connected to said second ohmic contact.
Dependencies are inferred from the claim text.