Method of forming a contact
AssigneeSharp Kabushiki Kaisha
InventorsTakao Kinoshita, Satoshi Saito
Life of this patent
Estimating the term…
Abstract
A method of forming a contact is disclosed. The method of the present invention includes the steps of: forming an insulating layer on a silicon compound; forming a contact hole in the insulating layer, the contact hole reaching the silicon compound; forming at least one layer of a refractory material film on an inner wall of the contact hole and on a surface of the insulating layer; forming a silicon containing tungsten layer on the refractory material film by CVD; and growing tungsten on the silicon containing tungsten layer by CVD, to fill the contact hole with the tungsten wherein the silicon containing tungsten layer contains silicon in the range of 0.6 wt. % to 20 wt. %.
Claims8
A method of forming a contact comprising the steps of:
- forming an insulating layer on an impurity doped silicon;
- forming a contact hole in said insulating layer, said contact hole reaching said impurity doped silicon;
- forming at least one layer of a refractory material film on an inner wall of said contact hole and on a surface of said insulating layer;
- forming a silicon containing tungsten layer on said refractory material film by CVD;
- and
- growing tungsten on said silicon containing tungsten layer by CVD, to fill said contact hole with said tungsten, and wherein said silicon containing tungsten layer contains silicon in the range of 0.6 wt. % to 20 wt. %.
Dependencies are inferred from the claim text.