Fuse construction of a semiconductor device
AssigneeNippon Steel Corporation
InventorOkeda Yukihiro
Life of this patent
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Abstract
At least one fusing electrode charging electrode portion is connected to an intermediate portion of a fuse body of a fuse that has the fuse body and connecting end electrode portions provided at both ends thereof. A fusing voltage for fusing the fuse is charged through this fusing voltage charging electrode portion. It allows the concentration of a current at a specific portion of the fuse body to assure fusing of the fuse body at the specified portion. In addition, it is not necessary to increase the overall resistance of the fuse, no problem will arise even when the fuse, and is used in the circuit.
Claims15
A fuse structure for a semiconductor device that includes a fuse body incorporated in an internal wiring of the semiconductor device and connecting end electrode portions provided at both ends of the fuse body, said fuse structure having at least one fusing voltage charging electrode provided in said fuse body and between said end electrode portions to drive a fusing current for fusing said fuse body by resistance heating.
A fuse structure to be incorporated in an internal wiring of a semiconductor device, comprising:
- a fuse body:
- first electrodes provided at both ends of said fuse body for connecting said fuse body with other circuit systems;
- and
- at least one second electrode connected to said fuse body independently of said first electrodes for providing thereto a fusing voltage to fuse the fuse body by resistance heating.
A fuse structure for a semiconductor device including at least one charging electrode connected along a fusible electrical path capable of being melt-cut anywhere along its length, this length being defined by the distance between adjacent end electrodes, said adjacent end electrodes also being connected to the fusible electrical path at respective first and second ends thereof, said at least one charging electrode receiving a fusing voltage during a fusing operation and no voltage during a non-fusing or normal operation,
- said fusible electrical path being adapted to be melt-cut along a predetermined portion of the fusible electrical path when a fusing current is applied to said at least one charging electrode,
- wherein the fusible electrical path is of sufficient resistance to prevent it from being melt-cut during normal operation, and
- wherein the predetermined fusing intensity of the fusing voltage is set sufficiently high to create a melt-cut in the fusible electrical path but not so high as to damage circuit elements connected across the adjacent end electrodes.
Dependencies are inferred from the claim text.