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US 5,331,194 AGranted
Bipolar static induction transistor
AssigneeFuji Electric Co., Ltd.
InventorKatsunori Ueno
Life of this patent
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Abstract
In a bipolar static induction transistor (BSIT) with increased input impedance, gate-voltage control is used for switching operations. The BSIT includes a collector region, a base region, an emitter region, and a source region in the base region. For enhanced turn-off, an auxiliary base region is included; alternatively, a drain region is provided in the base region.
Claims6
A bipolar transistor, comprising:
- a collector region of first conductivity type having first and second surfaces;
- a base region of second conductivity type having first and second surfaces formed in an insular form at the first surface of the collector region;
- an emitter region of first conductivity type adjoining the base region formed at the first surface of the collector region;
- a source region of first conductivity type formed in an insular form at the first surface of the base region which is electrically coupled with the source region;
- and
- a gate disposed on a gate insulator which is formed on a portion of the base region between the first surface of the collector region and the source region;
- wherein the current flowing between the collector region and the emitter region is controlled by a voltage applied to the gate with the base region and the source region short-circuited together.
4 more elements
Dependencies are inferred from the claim text.