Semiconductor device resistant to slip line formation
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorYasukazu Mukogawa
Life of this patent
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Abstract
A semiconductor substrate allowing prevention of the breakdown voltage degradation of a gate oxide film and having a prescribed mechanical strength in order to cope with increase in the diameters of wafers corresponding to reduction in the dimensions of semiconductor devices and improvement in productivity, and a Bi-CMOS semiconductor device allowing electrical characteristics to be maintained in any of a bipolar transistor and a field effect transistor are provided. An epitaxial layer is formed on a silicon wafer formed by means of CZ method. A silicon wafer formed by means of FZ method is joined onto the epitaxial layer. An npn bipolar transistor is formed in the epitaxial layer. An n channel MOS transistor and a p channel MOS transistor are formed in the silicon wafer.
Claims7
A semiconductor device, comprising:
- a first semiconductor substrate having a main surface and containing oxygen in a first concentration;
- a semiconductor layer epitaxially grown on the main surface of said first semiconductor substrate;
- a second semiconductor substrate joined onto said semiconductor layer and containing oxygen in a second concentration lower than said first concentration;
- a bipolar transistor formed in said semiconductor layer and including
- an emitter region of first conductivity type formed in said semiconductor layer and having an upper surface, a lower surface and side surfaces,
- a base region of second type conductivity formed to surround said lower surface and side surfaces of said emitter region, said base region having an upper surface, a lower surface and side surfaces,
- a collector region of the first type conductivity formed to surround said lower surface and side surfaces of said base region;
- and
- a field effect transistor formed in said second semiconductor substrate.
A semiconductor device, comprising:
- a first semiconductor substrate having a main surface and containing oxygen in a first concentration;
- a semiconductor layer epitaxially grown on the main surface of said first semiconductor substrate;
- a second semiconductor substrate joined onto said semiconductor layer and containing oxygen in a second concentration lower than said first concentration;
- a bipolar transistor formed in said semiconductor layer;
- and
- at least two field effect transistors formed in said second semiconductor substrate;
- wherein
- said at least two field effect transistors include a field effect transistor of a first type conductivity and a field effect transistor of a second type conductivity.
A semiconductor device, comprising:
- a first semiconductor substrate having a main surface and containing oxygen in a first concentration;
- a semiconductor layer epitaxially grown on the main surface of said first semiconductor substrate;
- a second semiconductor substrate having a thickness in the range from 10 to 750 .mu.m joined onto said semiconductor layer and containing oxygen in a second concentration lower than said first concentration;
- a bipolar transistor formed in said semiconductor layer;
- and
- a field effect transistor formed in said second semiconductor substrate.
A semiconductor device, comprising:
- a first semiconductor substrate having a main surface and containing oxygen in a first concentration;
- a semiconductor layer epitaxially grown on the main surface of said first semiconductor substrate;
- an oxide layer formed on said semiconductor layer;
- a second semiconductor substrate formed on said oxide layer and containing oxygen in a second concentration lower than said first concentration;
- a bipolar transistor formed in said semiconductor layer;
- and
- at least one field effect transistor formed in said second semiconductor substrate.
Dependencies are inferred from the claim text.