Semiconductor device
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorHitoshi Kudoh
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Abstract
A semiconductor device includes plural transistors in which the transistors themselves share a gate and a channel region and posses three or more source and drain regions. In such a configuration, a drain current is determined by the voltage application condition (potential difference of all source and drain regions). Therefore, assuming one of the three source and drain regions to be a control terminal (disturbance terminal) instability or drift of the transistor operation may be intentionally produced by applying proper voltages to each of the three source and drain regions.
Claims12
A semiconductor device comprising:
- (a) a substrate of a first conductivity type having a surface region;
- (b) four non-overlapping diffusion layers including at least a first source layer, a second source layer and a drain layer, disposed in said substrate and electrically separated so that a different voltage level may be applied to each of said diffusion layers, and wherein each of said four diffusion layers is of a second conductivity type which is reverse to said first conductivity type;
- and
- (c) a common gate disposed on said substrate surface region between said four diffusion layers wherein only one common channel is formed in a single continuous physical region between said four diffusion layers.
A semiconductor device comprising:
- (a) a substrate of a first conductivity type having a surface region and, disposed in said substrate, a first diffusion layer, a second diffusion layer and a third diffusion layer, said diffusion layers including first and second source layers and a first drain layer, none of said source and drain layers overlapping one another wherein said first source layer and said second source layer are electrically separated so that a first voltage level may be applied to said first source layer and a second voltage level, different from said first voltage level, may be applied to said second source layer and wherein each of said first source layer, said second source layer and said first drain layer is of a second conductivity type which is reverse to said first conductivity type;
- and
- (b) a common gate disposed on said substrate and located on said substrate between said three diffusion layers wherein only one common channel is formed in a single continuous physical region by said three diffusion layers.
A semiconductor device comprising:
- (a) a substrate having a surface region;
- (b) three non-overlapping diffusion layers including a first drain layer, a second drain layer and a source layer, disposed in said substrate and electrically separated so that a different voltage level may be applied to each of said diffusion layers, said semiconductor device including not more than three diffusion layers;
- and
- (c) a common gate disposed on said substrate surface region between said three diffusion layers wherein only one common channel is formed in a single continuous physical region between said three diffusion layers.
A semiconductor device comprising:
- (a) a substrate having a surface region;
- (b) at least five non-overlapping diffusion layers disposed in said substrate and electrically separated;
- and
- (c) a common gate disposed on said substrate surface region between said diffusion layers wherein only one common channel is formed in a single continuous physical region between said diffusion layers.
Dependencies are inferred from the claim text.