Ferroelectric thin film element with (III) orientation
AssigneeMyrata Mfg., Co., Ltd.
InventorToshio Ogawa
Life of this patent
Estimating the term…
Abstract
A ferroelectric thin film element constructed by forming a first electrode composed of an alloy thin film of a Ni-Cr-Al system or Ni-Al system on a substrate and forming a ferroelectric thin film composed of a ferroelectric material having a composition having a spontaneous axis in the direction (111) and having a crystal orientation in the direction (111) on the first electrode composed of a thin film.
Claims7
A ferroelectric thin film element comprising:
- a substrate;
- an electrode formed on said substrate and composed of an alloy thin film in which the alloy is selected from the group consisting of the Ni-Cr-Al system and the Ni-Al system;
- and
- a ferroelectric thin film formed on said electrode and having a crystal orientation in the direction (111),
- said ferroelectric thin film being composed of a ferroelectric material having a composition with a spontaneous polarization axis in the direction (111).
The ferroelectric thin film element according to chain 1, wherein said ferroelectric material has a composition of a rhombohedral phase of ferroelectric ceramics of a lead titanate zirconate system.
Dependencies are inferred from the claim text.