Method to improve interlevel dielectric planarization
AssigneeSGS-Thomson Microelectronics S.A.
InventorsFrank R. Bryant, Charles R. Spinner, III
Life of this patent
Estimating the term…
Abstract
A method is provided for forming a substantially planarized surface of an integrated circuit, and an integrated circuit formed according to the same. A conductive area is formed over a portion of a dielectric region. A first spin-on-glass layer is formed over the conductive area and exposed dielectric region. A second spin-on-glass layer is formed over the first spin-on-glass layer; wherein the second spin-on-glass layer has a slower etch rate than the first spin-on-glass layer. A partial etchback of the first and second spin-on-glass layers is performed forming a substantially planar surface.
Claims9
A structure consisting of a portion of a semiconductor device, comprising:
- a conductive structure disposed over a portion of a dielectric region;
- a conformal dielectric layer disposed adjacent to the conductive structure and disposed over the dielectric region, the conformal dielectric layer having an upper surface adjacent the conductive structure which is lower than an upper surface of the conductive structure;
- and
- a first spin-on-glass region disposed on the conformal dielectric layer upper surface, having an upper surface lower than the conductive structure upper surface, and having a first etch rate;
- and
- a second spin-on-glass region disposed on the first spin-on-glass region upper surface, having an upper surface approximately coplanar with the conductive structure upper surface, and having a second etch rate which is slower than the first etch rate.
A structure consisting of a portion of a semiconductor device, comprising:
- a plurality of conductive regions disposed over a portion of a dielectric region;
- a plurality of first spin-on-glass regions disposed adjacent to the conductive regions and disposed over the exposed dielectric region;
- and
- a plurality of second spin-on-glass regions having a different chemical composition and etch rate from the first spin-on-glass regions and disposed along selected areas of the upper surface of the first spin-on-glass regions forming a substantially planar surface.
Dependencies are inferred from the claim text.