Method for depositing aluminum layers on insulating oxide substrates
AssigneeAT&T Bell Laboratories
InventorsJohn E. Cunningham, William Y. Jan, John A. Rentschler, Colin A. Warwick
Life of this patent
Estimating the term…
Abstract
A manufacturing method which includes forming a metallic, aluminum-containing layer adherent to a surface of a body. The method includes the steps of depositing aluminum on the surface from an aluminum-containing vapor, and during the aluminum-depositing step, the further step of depositing arsenic, phosphorus, or antimony on the surface from the vapor.
Claims11
A method for manufacturing an article which comprises a substrate body, wherein the substrate body includes an insulating material region having a principal surface, the method comprising the steps of:
- a) depositing on the surface, from an aluminum-containing vapor, a metallic layer that substantially comprises metallic aluminum;
- and
- b) during step (a), depositing on the surface, from the vapor, an additional element such that the additional element is incorporated in the metallic layer in an amount effective for improving the wetting of the surface by the metallic layer, the additional element selected from the group consisting of arsenic, phosphorus, and antimony.
A method for manufacturing an article which comprises a wafer of semiconductor material overlain by a layer of insulating material at least partially penetrated by a hole having sidewalls and a bottom, the method comprising the steps of:
- a) from an aluminum-containing vapor, depositing a metallic layer that comprises aluminum onto the surface such that the hole is filled by the metallic layer;
- and
- b) during step (a), depositing onto the surface, from the vapor, an additional element such that the additional element is incorporated in the metallic layer, the additional element selected from the group consisting of arsenic, phosphorus, and antimony.
Dependencies are inferred from the claim text.