Molybdenum boride barrier layers between aluminum and silicon at contact points in semiconductor devices
AssigneeVLSI Technology, Inc.
InventorsLandon Vines, John Cain, Chang-Ou Lee, Sigmund Koenigseder, Felix Fujishiro
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Abstract
Increases in the contact resistance at the aluminum-silicon interface in contact points is inhibited by employing a molybdenum boride conductive barrier layer between the aluminum conductor and the silicon substrate.
Claims8
A semiconductor device comprising:
- (a) a silicon substrate;
- (b) a plurality of aluminum wires placed over the substrate and vertically spaced apart from each other and the substrate by insulating layers wherein the wires are in electrical contact with the substrate at a plurality of contact points;
- and
- (c) a conductive molybdenum boride barrier layer placed between and in physical contact with the substrate and the aluminum wires at the contact points so that the substrate and the aluminum wires are in electrical contact with each other wherein said molybdenum boride barrier layer comprises a composition represented by the formula MoB.sub.x where x has a value of from about 1.0 to about 2.0.
In a semiconductor device comprising a silicon substrate and circuit elements which include a plurality of aluminum wires placed over the substrate and vertically spaced apart from each other and the substrate by insulating layers of dielectric wherein the wires are in electrical contact with the substrate at a plurality of contact points wherein the improvement comprises a conductive molybdenum boride barrier layer positioned between and in physical contact with the substrate and the aluminum wires at the contact points so that while the substrate and the aluminum wires are in electrical contact with each other they are not in physical contact with each other wherein said molybdenum boride barrier layer comprises a composition represented by the formula MoB.sub.x where x has a value of from about 1.0 to about 2.0.
Dependencies are inferred from the claim text.