Ablative etch resistant coating for laser personalization of integrated circuits
AssigneeQuick Technologies Ltd.
InventorsMeir I. Janai, Zvi Orbach, Alon Kapel, Sharon Zehavi
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Abstract
A programmable integrated circuit for prototyping applications including a first patterned metal layer, an insulation layer formed over the first metal layer and a second patterned metal layer formed over the insulation layer, the first and second patterned metal layers being formed with selectably removable regions, the insulation layer being formed with apertures overlying at least some of the selectably removable regions, and there being formed over the selectably removable regions a coating comprising a layer of a dielectric material of high laser radiation absorption coefficient.
Claims17
A semiconductor device comprising:
- a first patterned metal layer;
- an insulation layer formed over the first metal layer;
- and
- a second patterned metal layer formed over the insulation layer;
- said first and second patterned metal layers being formed with selectably removable regions;
- said insulation layer being formed with apertures overlying at least some of the selectively removable regions, and
- there being formed over the selectably removable regions an ablative triple layer coating comprising a layer of silicon oxide over which is formed a layer of silicon nitride and over which is formed a layer of amorphous silicon.
A semiconductor device comprising:
- a first patterned metal layer;
- an insulated layer formed over the first metal layer;
- and
- a second patterned metal layer formed over the insulation layer;
- said first and second patterned metal layers being formed with selectably removable regions,
- said insulation layer being formed with apertures overlying at least some of the selectably removable regions, and
- there being formed over the selectably removable regions an ablative multi-layer coating comprising first and second dielectric layers having different etchability and thereover a layer of amorphous silicon.
A semiconductor device comprising:
- a first patterned metal layer;
- an insulation layer formed over the first metal layer;
- a second patterned metal layer formed over the insulation layer;
- said first and second patterned metal layers being formed with selectably removable regions,
- said insulation layer being formed with apertures overlying at least some of the selectably removable regions, and
- there being formed over the selectably removable regions an ablative multi-layer dielectric coating comprising a dielectric layer and thereover a layer of laser energy absorbing material comprising amorphous silicon.
A semiconductor device comprising:
- a first patterned metal layer;
- an insulation layer formed over the first metal layer;
- and
- a second patterned metal layer formed over the insulation layer;
- said first and second patterned metal layers being formed with selectably removable regions, and
- there being formed over the selectably removable regions an ablative multi-layer coating comprising a dielectric layer and thereover a layer of amorphous silicon.
Dependencies are inferred from the claim text.