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US 5,329,151 AGranted
Semiconductor diode
AssigneeAT&T Bell Laboratories
InventorsYoginder Anand, Roger J. Malik
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Abstract
The disclosed improved GaAs majority carrier rectifying barrier diodes comprise a p.sup.+ region between semiconductor regions that comprise n-doped material. Exemplary structures are n.sup.+ -i-p.sup.+ -i-n.sup.+ and n.sup.+ -n-p.sup.+ -n-n.sup.+. The improvement comprises use of carbon as the p-dopant and results in readily manufacturable reliable devices.
Claims10
An article comprising a GaAs-based semiconductor diode comprising:
- a) a first and a second planar semiconductor region, with each of the first and second regions comprising n-doped semiconductor material;
- b) a p-doped planar third semiconductor region between said first and second regions, said third region being of thickness t;
- and
- c) means for electrically contacting said first and second regions such that an electrical bias can be applied between said first and second regions;
- wherein
- d) t is selected such that, at room temperature and with zero applied bias, said third semiconductor region is substantially depleted of holes;
- and wherein the dopant in the third semiconductor region essentially is carbon.
4 more elements
Dependencies are inferred from the claim text.