High voltage integrated flyback circuit in 2 .mu.m CMOS
AssigneeXerox Corporation
InventorsTuan A. Vo, Mohamad M. Mojaradi, Aram Nahidipour
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Abstract
When a field effect transistor is used to control the current through an inductive load, the flyback voltage is felt through the vertical pnp transistor at the drain, which onducts to the substrate. This current represents a power loss and a source of heat. This invention supplies a second lateral transistor which conducts this current back to the power supply.
Claims2
A circuit comprising a bipolar transistor having an emitter, base and collector, for clamping the drain of a field effect transistor having a drain, to a positive voltage comprising:
- an n-well in a p-substrate,
- a p+ area in said n-well which forms the field effect transistor drain and the bipolar transistor emitter,
- a first n+ area in said n-well which forms the bipolar transistor base,
- a second p+ area in said n-well which forms the bipolar transistor collector, and
- said collector coupled to said positive voltage.
A circuit comprising a lateral bipolar transistor having an emitter, base and collector, for clamping the drain of a field effect transistor having a drain, to a positive voltage comprising:
- a p-well in an n-substrate,
- an n+ area in said p-well which forms the field effect transistor drain and the bipolar transistor emitter,
- a first p+ area in said p-well which forms the bipolar transistor base,
- a second n+ area in said p-well which forms the bipolar transistor collector, and
- said collector coupled to said positive voltage.
Dependencies are inferred from the claim text.