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US 5,328,873 AGranted
Process for forming deposited film by use of alkyl aluminum hydride
AssigneeCanon Kubushiki Kaisha
InventorsNobuo Mikoshiba, Kazuo Tsubouchi, Kazuya Masu
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Abstract
A process for forming an Al film of good quality according to the CVD method utilizing the reaction between alkyl aluminum hydride and hydrogen, which is an excellent deposited film formation process also capable of selective deposition of Al.
Claims8
A process for deposition comprising:
- providing a silicon substrate having a crystal orientation of (100) plane in a space for film formation;
- introducing a gas of an alkyl aluminum hydride and hydrogen gas into the space for film formation;
- and
- forming monocrystalline aluminum having a crystal orientation of (111) plane on the substrate surface of (100) plane.
1 more element
A process for deposition comprising:
- providing a silicon substrate having a crystal orientation of (111) plane in a space for film formation;
- introducing a gas of an alkyl aluminum hydride and hydrogen gas into the space for film formation;
- and
- forming monocrystalline aluminum having a crystal orientation of (100) plane on the substrate surface of (111) plane.
1 more element
Dependencies are inferred from the claim text.