Method for making cusp-free anti-fuse structures
AssigneeVLSI Technology, Inc.
InventorsWilliam J. Boardman, David P. Chan, Kuang-Yeh Chang, Calvin T. Gabriel, Vivek Jain, Subhash R. Nariani
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AssigneeVLSI Technology, Inc.
InventorsWilliam J. Boardman, David P. Chan, Kuang-Yeh Chang, Calvin T. Gabriel, Vivek Jain, Subhash R. Nariani
Estimating the term…
A method for making an anti-fuse structure characterized by the steps of forming a conductive base layer; forming an anti-fuse layer over the base layer; patterning the anti-fuse layer to form an anti-fuse island; forming an insulating layer over the anti-fuse island; forming a via hole through the insulating layer to the anti-fuse island; forming a conductive connection layer over the insulating layer and within the via hole; and patterning the conductive connection layer to form a conductive contact to the anti-fuse island. Preferably, the anti-fuse island comprises amorphous silicon which can optionally be covered with a thin layer of a titanium-tungsten alloy.
A method for making an anti-fuse structure, the method comprising the steps of:
Dependencies are inferred from the claim text.