Back to results
US 5,328,855 AGranted
Formation of semiconductor diamond
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsMakoto Kitabatake, Masahiro Deguchi, Takashi Hirao
Life of this patent
Estimating the term…
Abstract
Semiconductor diamond is formed by a process comprising irradiating diamond crystal with light having irradiation density of more than 0.1 W/cm.sup.2, annihilating defects in the diamond crystals, and cleaning the surface of the diamond crystals.
Claims14
Method for formation of semiconductor diamond comprising
- irradiating diamond crystal with light having irradiation density of more than 0.1 W/cm.sup.2 and less than 100 W/cm.sup.2, and keeping the temperature of the diamond crystal during light irradiation at 300.degree. C. or less,
- annihilating defects in said diamond crystals, to form said semiconductor diamond.
Method for formation of semiconductor diamond comprising:
- irradiating diamond crystal with light having irradiation density of more than 0.1 W/cm.sup.2 and less than 100 W/cm.sup.2, and keeping the temperature of the diamond crystal during light irradiation at 300.degree. C. or less.
- keeping said diamond crystal in atmosphere including oxygen and
- cleaning the surface of said diamond crystal to form said semiconductor diamond.
Method for formation of semiconductor diamond comprising:
- implanting dopants in diamond crystal by ion implantation technique.
- then irradiating light having irradiation density of more than 0.1 W/cm.sup.2 and less than 100 W/cm.sup.2, and keeping the temperature of the diamond crystal during light irradiation at 300.degree. C. or less,
- annihilating defects in diamond crystals, to form semiconductor diamond.
Method for formation of semiconductor diamond comprising:
- implanting dopants in diamond crystal by ion implantation technique,
- irradiating light having irradiation density of more than 0.1 W/cm.sup.2 and less than 100 W/cm.sup.2 simultaneously during said implantation and keeping the temperature of the diamond crystal during light irradiation at 300.degree. C. or less,
- annihilating defects in diamond crystals to form semiconductor diamond.
Method for formation of semiconductor diamond comprising:
- implanting dopants in diamond crystal by ion implantation technique,
- irradiating light irradiation density of more that 0.1 W/cm.sup.2 and less that 100 W/cm.sup.2 intermittently during said implantation and keeping the temperature of the diamond crystal during light irradiation at 300.degree. C. or less, and annihilating defects in diamond crystals to form semiconductor diamond.
Dependencies are inferred from the claim text.