Method of forming a pattern
AssigneeHitichi, Ltd.
InventorsToshihiko Tanaka, Norio Hasegawa, Toshiaki Yamanaka, Akira Imai, Hiroshi Shiraishi, Takumi Ueno, Hiroshi Fukuda
Life of this patent
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Abstract
A comb-like or dot-like phase shifter pattern is added to a phase shifter used in phase shifting mask technology, which is then exposed onto a wafer. This enables the formation of extremely fine line patterns or space patterns having widths different from each other simultaneously. Further, when two reticles are disposed such that phase shifter patterns disposed therein intersect each other and are exposed consecutively onto a wafer, a fine hole pattern or dot pattern can be formed at a position where the phase shifter patterns intersect each other.
Claims16
A method of forming a pattern by irradiating light through a reticle onto a photoresist film via a reduction projection printing system to form a predetermined pattern on said photoresist film, wherein said reticle comprises an optically transparent plate, a phase shifter, and a phase shifter pattern, the phase shifter and the phase shifter pattern each having a predetermined shape and being disposed on said plate, said phase shifter and said phase shifter pattern being formed from a single transparent film disposed on said plate such that a material of which said phase shifter is made is the same as a material of which said phase shifter pattern is made and a thickness of said phase shifter is the same as a thickness of said phase shifter pattern, the phase of light after passing through a bare portion of said plate on which said phase shifter or said phase shifter pattern is not disposed and the phase of light after passing through said phase shifter or said phase shifter pattern being different from each other by 180.degree..+-.10.degree., and wherein the size of the phase shifter pattern is less than the resolution of said reduction projection printing system.
A method of forming a pattern by irradiating light through a reticle onto a photoresist film via a reduction projection printing system to from a predetermined pattern on said photoresist film, wherein said reticle comprises an optically transparent plate, a phase shifter, and a phase shifter pattern, the phase shifter and the phase shifter pattern each having a predetermined shape and being disposed on said plate, a material of which said phase shifter is made being the same as a material of which said phase shifter pattern is made and a thickness of said phase shifter being the same as a thickness of said phase shifter pattern, the phase of light after passing through a bare portion of said plate on which said phase shifter or said phase shifter pattern is not disposed and the phase of light after passing through said phase shifter or said phase shifter pattern being different from each other by 180.degree..+-.10.degree., and wherein the size of the phase shifter pattern is less than the resolution of said reduction projection printing system;
- wherein the phase shifter and the phase shifter pattern are each formed from a coating layer formed by coating the plate with a spin on glass containing an acid generator and a residual silanol group.
Dependencies are inferred from the claim text.