Photomask and method of manufacturing the same

A method of manufacturing a photomask having a plurality of light-blocking regions disposed in parallel, first and second phase regions alternately disposed along the direction of arrays of the light-blocking regions, with each of the light-blocking regions interposing between them, and a third phase region disposed adjacent to the first and second phase regions, comprising

• a first step of forming a first phase film, a second phase film and a light-blocking film on a transparent substrate in this order;
• a second step of forming the light-blocking regions disposed in parallel by selectively removing the light-blocking film by etching;
• a third step of selectively removing by etching the regions in the second phase film corresponding to the first and third phase regions, and
• a fourth step of selectively removing by etching the region in the first phase film corresponding to the first phase region.

A method of manufacturing a photomask having a plurality of light-blocking regions disposed in parallel, first and second phase regions alternately disposed along the direction of arrays of the light-blocking regions, with each of the light-blocking regions interposing between them, and a third phase region disposed adjacent to the first and second phase regions, comprising

• a first step of forming a light-blocking film on a transparent substrate;
• a second step of forming the light-blocking regions disposed in parallel by selectively removing the light-blocking film by etching;
• a third step of selectively removing the region in an exposed region of the transparent substrate corresponding to the first and third phase regions by etching to a particular depth;
• and
• a fourth step of further selectively removing the region in the exposed region of the transparent substrate corresponding to the first phase region by etching to a particular depth.

A method of manufacturing a photomask having a plurality of light-blocking regions disposed in parallel, first and second phase regions alternately disposed along the direction of arrays of the light-blocking regions, with each of the light-blocking regions interposing between them, and a third phase region disposed adjacent to the first and second phase regions, comprising

• a first step of forming a light-blocking film on a transparent substrate;
• a second step of forming the light-blocking regions disposed in parallel by selectively removing the light-blocking film by etching;
• a third step of selectively forming a phase film on the region in an exposed region of the transparent substrate corresponding to the second phase region;
• and
• a fourth step of selectively removing the region in the exposed region of the transparent substrate corresponding to the first phase region by etching to a particular depth.

A method of manufacturing a photomask having a plurality of light-blocking regions disposed in parallel, first and second phase regions alternately disposed along the direction of arrays of the light-blocking regions, with each of the light-blocking regions interposing between them, and a third phase region disposed adjacent to the first and second phase regions, comprising

• a first step of forming a light-blocking film on a transparent substrate;
• a second step of forming the light-blocking regions disposed in parallel by selectively removing the light-blocking film by etching;
• a third step of selectively forming a first phase film on the region in an exposed region of the transparent substrate corresponding to the second and third phase regions;
• and
• a fourth step of selectively forming a second phase film on the region in the first phase film corresponding to the second phase region.