Semiconductor device with hydrogen ion intercepting layer

A semiconductor device comprising:

• a semiconductor substrate;
• a first insulating oxide film provided on said semiconductor substrate;
• a second insulating oxide film provided on said semiconductor substrate, contiguous to said first insulating oxide film and having a film thickness larger than that of a first insulating oxide film;
• a first polysilicon resistance film provided on and in contact with said first insulating oxide film;
• a second polysilicon resistance film provided on and in contact with said second insulating oxide film;
• a hydrogen ion intercepting film which prevents passage of hydrogen ion, provided on said semiconductor substrate and covering said first polysilicon resistance film, and said second polysilicon resistance film;
• said hydrogen ion intercepting film being provided with a first opening for partially exposing a surface of said first polysilicon resistance film and a second opening for partially exposing a surface of said second polysilicon resistance film;
• a film electrode electrically connected through said first opening to said first polysilicon resistance film;
• a second electrode electrically connected through said first opening to said polysilicon resistance film;
• and
• an insulating protection film disposed on said semiconductor substrate and covering said first polysilicon resistance film, said second polysilicon resistance film, said first electrode and said second electrode.

A semiconductor device comprising:

• a semiconductor substrate;
• a first insulating oxide film provided on said semiconductor substrate;
• a second insulating oxide film provided on said semiconductor substrate, contiguous to said first insulating oxide film and having a film thickness larger than that of said first insulating oxide film;
• a first polysilicon resistance film provided on said first insulating oxide film;
• a second polysilicon resistance film provided on said second insulation oxide film;
• a third insulating oxide film provided on said substrate and covering said first and second polysilicon resistance films;
• and
• a hydrogen ion intercepting film which prevents passage of hydrogen ion, provided on said third insulating oxide film and covering at least a portion of said first polysilicon resistance film and at least a portion of said second polysilicon resistance film.