US 5,327,000 AGranted

Semiconductor device interconnected to analog IC driven by high voltage

AssigneeMitsubishi Denki Kabushiki Kaisha

InventorsKazuaki Miyata, Masayuki Masuda

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Abstract

In a MOS type LSI comprising an n channel-open-drain-transistor capable of connecting with an analog IC driven by a high voltage, a surge breakdown voltage and a drain breakdown voltage of the open-drain-transistor is increased, and hence the reliability is increased. An n channel-open-drain-transistor includes a ring-shaped gate electrode and a drain region. A drain region is surrounded by a gate electrode. Drain region includes an n.sup.- region and an n.sup.+ region. An n channel MOS transistor includes a gate electrode and a drain region. Drain region includes an n.sup.- region and an n.sup.+ region. An impurity concentration of n.sup.- drain region of the n channel-open-drain-transistor is higher than an impurity concentration of n.sup.- drain region of the n channel MOS transistor.

A semiconductor device having an output transistor having a high breakdown voltage, comprising:

a semiconductor substrate having a main surface;
a semiconductor region of a first type conductivity having a first element forming region and a second element forming region separated by a field isolating oxide, the main surface of said semiconductor substrate being substantially planar throughout said first and second element forming regions;
a first field effect transistor formed in said first element forming region;
and
a second field effect transistor formed in said second element forming region;
said first field effect transistor including:
(i) first and second impurity regions of a second type conductivity formed spaced apart on the main surface of said semiconductor substrate, and
(ii) a first gate electrode formed between said first and second impurity region on said main surface of said semiconductor substrate through an insulating film, said first gate electrode circumscribing said first impurity region, wherein
at least said first impurity region includes a first low concentration region formed adjacent said first gate electrode and having a first impurity concentration, and a first high concentration region formed in a distal region apart form said first gate electrode, said first high concentration region formed in contact with said first low concentration region, and having a second impurity concentration which is higher than said first impurity concentration, said second field effect transistor Including:
(i) third and fourth impurity regions of the second type conductivity formed spaced apart on the main surface of said semiconductor substrate, and
(ii) a second gate electrode formed between said third and fourth impurity region on said main surface of said semiconductor substrate through an insulating film, said second gate electrode having a substantially rectangular shape, wherein
at least said third impurity region includes a second low concentration region formed adjacent said second gate electrode and having a third impurity concentration which is lower than said first impurity concentration, and a second high concentration region formed in a distal region apart from said second gate electrode connecting with said second low concentration region and having a fourth impurity concentration which is higher than said third impurity region.

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Abstract

Claims7