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US 5,326,727 AGranted
Method for integrated circuit fabrication including linewidth control during etching
AssigneeAT&T Bell Laboratories
InventorsTaeho Kook, Avinoam Kornblit, Kolawole R. Olasupo
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Abstract
Pattern transfer from a resist to an underlying layer is accomplished by etching the underlying layer in a plasma comprising hydrogen bromide and oxygen. Accuracy of pattern transfer is obtained by using first and second materials underneath the resist. The first and second materials may be, e.g., polysilicon and a photoresist. Etching of the resist is performed under conditions designed to minimize changes in the horizontal dimensions.
Claims9
A method of integrated circuit fabrication comprising the steps of:
- forming a layer of first material on a substrate;
- covering said layer of first material with a layer of second material of photoresist, said second layer being a planarizing layer;
- covering said layer of second material with a resist, said second material reducing reflections of radiation used in the selective exposure of said resist;
- selectively exposing portions of said resist to radiation;
- etching said planarizing layer in a plasma comprising oxygen and at least one member selected from the group consisting of halogens and halogen hydrides, said at least one member and said oxygen having concentrations selected to minimize changes in the dimensions of the resist during etching which exposes portions of said material.
2 more elements
Dependencies are inferred from the claim text.